STRAIN-COMPENSATION EFFECT ON THE REDUCTION OF LATTICE DISTORTION IN INGAAS (IN)GAAS(P) STRAINED-QUANTUM-WELL STRUCTURES ON GAAS SUBSTRATES/

InGaAs/InGaAsP strained quantum-well (QW) structures grown by metal-or ganic vapor phase epitaxy on (001) GaAs substrates were investigated u sing photoluminescence measurement; and transmission electron microsco py. The lattice distortion in and near the QW structures caused by com pressive strain in the InGaAs wells was reduced far below that of ordi nary InGaAs/GaAs QW structures and the maximum number of QWs without c ross-hatched patterns on the samples can be increased when tensile-str ain InGaAsP barriers were introduced.