FORMATION OF INAS WIRES AND DOTS ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS BY MOLECULAR-BEAM EPITAXY

Authors
TORII S SHIM BR YASUDA H MAEHASHI K HASEGAWA S NAKASHIMA H
Citation
S. Torii et al., FORMATION OF INAS WIRES AND DOTS ON VICINAL GAAS(110) SURFACES WITH GIANT STEPS BY MOLECULAR-BEAM EPITAXY, JPN J A P 2, 36(12B), 1997, pp. 1645-1647
Citations number
10
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
12B
Year of publication
1997
Pages
1645 - 1647
Database
ISI
SICI code
Abstract
InAs are grown on vicinal GaAs (110) surfaces with giant steps using m olecular beam epitaxy. Atomic force microscopy, X-ray photoelectron sp ectroscopy and transmission electron microscopy show that uniform and well-aligned InAs wires and dots are formed on the facets at giant ste p edges due to the accumulation of InAs. This accumulation is only obs erved in a relatively high growth temperature range (580-600 degrees C ) and not at low temperatures.