THE HYSTERESIS CAUSED BY INTERFACE-TRAP AND ANOMALOUS POSITIVE CHARGEIN AL CEO2-SIO2/SILICON CAPACITORS/

We report the hysteresis induced by two similar defects located at and near the SiO2-Si interface in the Al/CeO2-SiO2/Si capacitor. We find that the hysteresis are generated directly due to the presence of inte rface trap and anomalous positive charge. Electrical characteristics o f the hysteresis are, however, distinct and are strongly dependent on the type of defects. For example, the hysteresis caused by interface t raps disappeared after passivating the Si dangling bonds by a post met allization annealing, while only a bias-temperature annealing causes t he reduction of the hysteresis generated by anomalous positive charge. We suggest the mechanisms of the hysteresis generation in the Al/CeO2 -SiO2/Si capacitor.