INTERFACIAL STABILITY BETWEEN TA-SN-O FILMS AND INDIUM TIN OXIDE ELECTRODES

Interfacial structures between Ta2O5-SnO2 (Ta-Sn-O) films and indium t in oxide (ITO) electrodes were studied using transmission electron mic roscopy (TEM) and secondary ion mass spectroscopy (SIMS). It was found that indium atoms diffused into the Ta2O5 film by annealing (at 923 K for 30 min in N-2 atmosphere), while diffusion was not observed at th e Ta-Sn-O/ITO interface. The thermal stability of the interfaces of Ta 2O5/ITO and Ta-Sn-O/ITO can be explained in terms of the difference of the diffusion behavior at the interface, which affect the superior el ectrical properties of the Ta-Sn-O/ITO structures.