The S enrichment of Ni-sapphire interfaces in the temperature range 50
0-800 degrees C was measured with Auger electron spectroscopy. Atomic
force microscopy was used to confirm that S segregated to the interfac
e rather than to interface voids or grain boundaries. The effects of a
tomic defects such as dislocations on S segregation was not determined
. Maximum segregation occurred at 700 degrees C, similar to that to Ni
grain boundaries. (C) 1997 Elsevier Science B.V.