DIAMOND TURNING OF SILICON SUBSTRATES IN DUCTILE-REGIME

Citation
Tp. Leung et al., DIAMOND TURNING OF SILICON SUBSTRATES IN DUCTILE-REGIME, Journal of materials processing technology, 73(1-3), 1998, pp. 42-48
Citations number
9
Categorie Soggetti
Material Science","Engineering, Manufacturing","Engineering, Industrial
ISSN journal
09240136
Volume
73
Issue
1-3
Year of publication
1998
Pages
42 - 48
Database
ISI
SICI code
0924-0136(1998)73:1-3<42:DTOSSI>2.0.ZU;2-C
Abstract
Silicons are used in both wafer fabrication and infrared optics. Direc t machining of silicon single crystal was carried out on a precision l athe equipped with an air spindle to a finish of 2.86 nm rms roughness . The success of the turning process depends on optimizing the machini ng parameters such as feed rate, depth of cut, tool rake angles, the c utting lubricants and the crystallographic orientation of the crystal being cut. It is shown that the commercial production of an optical su rface on brittle materials is made possible by single point diamond tu rning. (C) 1998 Elsevier Science S.A.