MOLECULAR-DYNAMICS MODELING OF SILICON-WAFER BONDING

Authors
SCHEERSCHMIDT K CONRAD D BELOV A GOSELE U
Citation
K. Scheerschmidt et al., MOLECULAR-DYNAMICS MODELING OF SILICON-WAFER BONDING, Computational materials science, 9(1-2), 1997, pp. 108-115
Citations number
6
Journal title
Computational materials science → ACNP
ISSN journal
09270256
Volume
9
Issue
1-2
Year of publication
1997
Pages
108 - 115
Database
ISI
SICI code
0927-0256(1997)9:1-2<108:MMOSB>2.0.ZU;2-F
Abstract
Molecular dynamics simulations based on empirical potentials are used to investigate the elementary steps of bonding two Si(001) wafers. The resulting interface models are applied to analyse high resolution ele ctron microscopy structure images of perfectly bonded wafers (UHV cond itions). (C) 1997 Elsevier Science B.V.