EXCITONS IN SEMICONDUCTOR-DIELECTRIC NANOSTRUCTURES

Authors
Citation
Lv. Keldysh, EXCITONS IN SEMICONDUCTOR-DIELECTRIC NANOSTRUCTURES, Physica status solidi. a, Applied research, 164(1), 1997, pp. 3-12
Citations number
10
ISSN journal
00318965
Volume
164
Issue
1
Year of publication
1997
Pages
3 - 12
Database
ISI
SICI code
0031-8965(1997)164:1<3:EISN>2.0.ZU;2-M
Abstract
Confinement in nanostructures with (some of the) linear dimensions sma ll compared to the exciton radius provides a possibility of enhancemen t of both the binding energy and the oscillator strength of excitons. Moreover in such structures the possibility arise of controlling the s trength of Coulomb interaction, responsible for binding of electron an d hole to the exciton, by combining materials for the structure with e ssentially different values of dielectric constants. Transformations o f Wannier-Mott excitons which are dependent on both of these factors - confinement geometry and dielectric constants ratio -, their optical manifestations and similar trends in many body phenomena, including el ectron-hole liquid formation, will be discussed.