BAND-GAP RENORMALIZATION IN PERIODICALLY DELTA-DOPED SEMICONDUCTORS

The photoluminescence of periodically delta-doped InP was measured at 4.2 K in magnetic fields of intensity between 0 and 14 T. The samples has a nearly constant earlier density of 5.0 x 10(12) cm(-2) and dopin g period varying from 130 to 245 Angstrom. A well defined fan diagram associated with the optical recombination of electrons in the E2 minib and and photoexcited holes is obtained. Extrapolation of the Landau le vel fan diagram to zero field allows us to estimate the band gap renor malization (BGR). The BGR decreases rapidly when the period of the sup erlattice is increased. The BGR observed can be accounted for by the d ensity of non-confined (three-dimensional) electrons present in the st ructure.