Yt. Rebane et al., STACKING-FAULTS AS QUANTUM-WELLS FOR EXCITONS IN WURTZITE GAN, Physica status solidi. a, Applied research, 164(1), 1997, pp. 141-144
A model of the exciton bound to stacking faults (SF) in GaN is suggest
ed. It is shown that SFs are potential wells (depth approximate to 120
meV and width approximate to 10 Angstrom) for electrons and potential
barriers (height approximate to 60 meV and width approximate to 10 An
gstrom) for holes. The binding energy of excitons at SF found from var
iational calculation is 45 meV. The 364 nm line in GaN photoluminescen
ce at 4 K is attributed to excitons bound to SFs.