STACKING-FAULTS AS QUANTUM-WELLS FOR EXCITONS IN WURTZITE GAN

A model of the exciton bound to stacking faults (SF) in GaN is suggest ed. It is shown that SFs are potential wells (depth approximate to 120 meV and width approximate to 10 Angstrom) for electrons and potential barriers (height approximate to 60 meV and width approximate to 10 An gstrom) for holes. The binding energy of excitons at SF found from var iational calculation is 45 meV. The 364 nm line in GaN photoluminescen ce at 4 K is attributed to excitons bound to SFs.