BIEXCITONS IN LOW-DIMENSIONAL CDZNSE ZNSE STRUCTURES/

The biexciton formation in (Cd, Zn)Se/ZnSe quantum dots (QDs) is studi ed by using time-resolved photoluminescence (PL) spectroscopy. Analyzi ng the spectral lineshape of the biexciton signal, an increase of the biexciton binding energy is observed with decreasing dot size due to t he influence of the carrier and the dielectric confinement in QDs. In addition. a faster rise time of the biexciton luminescence signal indi cates an enhanced biexciton formation coefficient in totally confined systems as compared to a quasi-two dimensional reference.