ELECTRIC-FIELD DOMAIN FORMATION AND MULTISTABILITY IN SEMICONDUCTOR MULTIPLE-QUANTUM WELLS IN THE PRESENCE OF THZ RADIATION

Citation
R. Aguado et G. Platero, ELECTRIC-FIELD DOMAIN FORMATION AND MULTISTABILITY IN SEMICONDUCTOR MULTIPLE-QUANTUM WELLS IN THE PRESENCE OF THZ RADIATION, Physica status solidi. a, Applied research, 164(1), 1997, pp. 235-239
Citations number
11
ISSN journal
00318965
Volume
164
Issue
1
Year of publication
1997
Pages
235 - 239
Database
ISI
SICI code
0031-8965(1997)164:1<235:EDFAMI>2.0.ZU;2-0
Abstract
We propose a self-consistent microscopic model of vertical sequential tunneling through multiple quantum wells in the presence of THz radiat ion. The model considers the Coulomb interaction in a mean field appro ximation. We analyze the current density through a double quantum well and a superlattice and study the formation of electric field domains in the presence of THz radiation and the appearance of new multistabil ity regions, both caused by the combined effect of the strong nonlinea rity coming from the Coulomb interaction and the new photon-assisted t unneling channels. We show how the electric field domains can be suppo rted by the virtual photonic sidebands due to multiple photon emission and absorption.