CONFINEMENT DEPENDENCE OF BIEXCITONIC BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS

Authors
EUTENEUER A MOBIUS J RETTIG R HOFMANN M MAYER EJ STOLZ W GOBEL EO RUHLE WW
Citation
A. Euteneuer et al., CONFINEMENT DEPENDENCE OF BIEXCITONIC BINDING-ENERGIES IN SEMICONDUCTOR QUANTUM-WELLS, Physica status solidi. a, Applied research, 164(1), 1997, pp. 253-258
Citations number
19
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
164
Issue
1
Year of publication
1997
Pages
253 - 258
Database
ISI
SICI code
0031-8965(1997)164:1<253:CDOBBI>2.0.ZU;2-Y
Abstract
We study the dependence of the biexciton binding energy on confinement in semiconductor quantum wells. A set of symmetrically strained (GaIn )As/Ga(PAs) quantum wells with different well depths and equal well wi dths is investigated by quantum beat spectroscopy based on transient d egenerate four-wave mixing. The ratio of biexcitonic to excitonic bind ing energy increases with stronger confinement. This ne iv experimenta l result is discussed in the framework of recent theoretical predictio ns and experimental results.