MAGNETOOPTICAL INVESTIGATION OF EXCITONS IN NARROW GAAS-ALGAAS QUANTUM WIRES

We present a method for the preparation of GaAs-AlGaAs quantum wire ar rays starting from holographically prepared masks. The combination of reactive ion etching and stepwise wet-chemical etching allows us to pr oduce narrow quantum wires. We achieved wire widths down to 40 nm. The diamagnetic shift of the magnetoexcitons in our samples shows clear e vidence of enhanced Coulomb interaction between photocreated electrons and holes due to the lateral confinement. A decrease of the lateral e xtension of the excitonic wave function from 10.6 nm in the 2D referen ce sample to 7.4 nm in the 40 nm wide quantum wires is deduced from th e data.