FINE-STRUCTURE OF EXCITONIC LEVELS IN SEMICONDUCTOR NANOSTRUCTURES

Authors
IVCHENKO EL
Citation
El. Ivchenko, FINE-STRUCTURE OF EXCITONIC LEVELS IN SEMICONDUCTOR NANOSTRUCTURES, Physica status solidi. a, Applied research, 164(1), 1997, pp. 487-492
Citations number
20
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
164
Issue
1
Year of publication
1997
Pages
487 - 492
Database
ISI
SICI code
0031-8965(1997)164:1<487:FOELIS>2.0.ZU;2-0
Abstract
A brief survey is given on recent work on the fine structure of zero-d imensional excitons in semiconductors. The paper focuses on microscopi c mechanisms of anisotropic exchange splitting of the localized-excito n radiative doublet in type-I and type-II heterostructures and on pola rized photoluminescence of excitons confined in self-assembled quantum dots.