A. Parlangeli et al., MAGNETOOPTICAL STUDY OF CORRELATED ELECTRON-HOLE LAYERS IN SINGLE-BARRIER HETEROSTRUCTURES, Physica status solidi. a, Applied research, 164(1), 1997, pp. 587-590
We report the low-temperature photoluminescence investigation of a sin
gle-barrier GaAs/AlAs/ GaAs p-i-n heterostructure with applied magneti
c fields of up to 17 T. Under conditions of forward bias, electrons an
d holes accumulate at opposite sides of the barrier to form two couple
d 2D layers of tunable density. We observe an onset of polarized recom
bination peaks originating from these layers when the filling factor i
s immediately lower than two. From the properties of the onset and the
shift of the peaks with applied voltage we conclude that we have to t
ake into account the Coulomb interaction between the layers to describ
e properly the physical situation of the system and we propose the pic
ture of a correlated ground state to explain the experimental findings
.