OPTICAL-PROPERTIES OF A LATERAL ARRAY OF GAAS QUANTUM WIRES GROWN BY FLOW-RATE MODULATION EPITAXY

Authors
HAMOUDI A OGURA M WANG XL OKADA T
Citation
A. Hamoudi et al., OPTICAL-PROPERTIES OF A LATERAL ARRAY OF GAAS QUANTUM WIRES GROWN BY FLOW-RATE MODULATION EPITAXY, Superlattices and microstructures, 22(3), 1997, pp. 353-358
Citations number
11
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
22
Issue
3
Year of publication
1997
Pages
353 - 358
Database
ISI
SICI code
0749-6036(1997)22:3<353:OOALAO>2.0.ZU;2-9
Abstract
We report on a photoluminescence excitation study of a lateral array o f GaAs quantum wires grown by flow rate modulation epitaxy on 4 mu m p itch V-grooves. Several excitonic transitions exhibiting a strong pola rization anisotropy and involving the ground and excited quantum wire subbands are clearly observed. (C) 1997 Academic Press Limited.