ENERGY-BAND STRUCTURE OF QUANTUM-SIZE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

We have investigated the energy band structure of the 40 nm gate lengt h n-metal-oxide-semiconductor field effect transistor (MOSFET) recentl y fabricated by M. One, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro a nd H. Iwai (IEEE Transaction on Electron Devices 42: 1822 (1995)). By the classical particle picture, the conducting channel at zero gate bi as is already open. When the one-dimensional quantum effect along the sample growth direction is included, the semiclassical model gives an increased threshold voltage. It is shown here that the large measured threshold voltage and therefore the success of a short-length MOSFET w orking at room temperature are well explained when the three-dimension al quantization effect is included. (C) 1997 Academic Press Limited.