EXPERIMENTAL-EVIDENCE OF THE OXYGEN DIMER IN SILICON

Authors
MURIN LI HALLBERG T MARKEVICH VP LINDSTROM JL
Citation
Li. Murin et al., EXPERIMENTAL-EVIDENCE OF THE OXYGEN DIMER IN SILICON, Physical review letters, 80(1), 1998, pp. 93-96
Citations number
29
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
80
Issue
1
Year of publication
1998
Pages
93 - 96
Database
ISI
SICI code
0031-9007(1998)80:1<93:EOTODI>2.0.ZU;2-E
Abstract
Optical characterization of the oxygen dimer in silicon has been perfo rmed for the first time. The vibrational IR absorption bands at 1012, 1060, and 1105 cm(-1) are shown to arise from this complex. Using heat -treatment studies, the dimer binding energy is determined to be about 0.3 eV. Indications of the high migration ability of the dimer predic ted earlier are found as well.