We used a new broadband spectroscopic technique to measure the dielect
ric function of GaAs over the spectral range of 1.5-3.5 eV following i
ntense 70-fs laser excitation. The results provide the most detailed i
nformation thus far on the electron and lattice dynamics both above an
d below the fluence threshold for permanent damage, F-th = 1.0 kJ/m(2)
. There are three distinct regimes of behavior: lattice heating (<0.5F
(th)), lattice disordering (0.6-0.8)F-th, and a semiconductor-to-metal
transition (>0.8F(th)). Below F-th, the changes are completely revers
ible.