INFLUENCE OF PRECURSOR ROUTE ON THE PHOTOLUMINESCENCE OF BULK NANOCRYSTALLINE GALLIUM NITRIDE

GaN derived from gallium imide, {Ga(NH)(3/2)}(n), typically exhibits y ellow defect photoluminescence, with the pyrolysis temperature influen cing the intensity of the emission. Pyrolysis of this same precursor i n relatively high boiling N,N,N',N'-tetramethyl-1,6-hexanediamine yiel ds blue photoluminescence with an emission maximum near 420 nm. In con trast, GaN derived from pyrolysis of gallazane precursors such as [H2G aNH2](3) yields blue light emission whose quantum yield can be improve d by a brief HF etch.