SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC

Authors
HEGDE RI MAITI B RAI RS REID KG TOBIN PJ
Citation
Ri. Hegde et al., SURFACE AND INTERFACE ROUGHNESS OF ULTRATHIN NITRIC-OXIDE OXYNITRIDE GATE DIELECTRIC, Journal of the Electrochemical Society, 145(1), 1998, pp. 13-15
Citations number
15
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
1
Year of publication
1998
Pages
13 - 15
Database
ISI
SICI code
0013-4651(1998)145:1<13:SAIROU>2.0.ZU;2-O
Abstract
Surface and interface roughness of 40-Angstrom oxynitride films grown on preoxidized (100) silicon surfaces in a nitric oxide (NO) ambient a t 800 degrees C have been investigated using atomic force microscopy w ith power spectral density, and cross-sectional transmission electron microscopy measurements. The results showed that the NO oxynitride sur face is smoother and has less interfacial roughness compared to the th ermal oxide (without NO anneal). These results are important given the current technological interest in oxynitrides for ultrathin gate diel ectric applications.