Yh. Seo et al., EFFECTS OF EXPERIMENTAL PARAMETERS ON VOID FORMATION IN THE GROWTH OF3C-SIC THIN-FILM ON SI SUBSTRATE, Journal of the Electrochemical Society, 145(1), 1998, pp. 292-299
Citations number
20
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
The effects of growth parameters have been examined for the epitaxial
growth of a void-free SiC film on a Si substrate. Experiments were per
formed under various growth conditions by pyrolyzing tetramethylsilane
(TMS) in a rapid thermal chemical vapor deposition reactor. Void-free
single crystalline SiC films were grown when the Si substrate was hea
ted after the flow of TMS. The increase of TMS flow rate produced void
-free SiC films, but the crystallinity of the films varied from single
crystalline to polycrystalline. The growth of void-free single crysta
lline SiC films was observed at substrate temperatures below 1000 degr
ees C. The outdiffusion of Si atoms from the Si substrate surface and
the void formation in the silicon side of the SiC/Si interface were in
vestigated using various experimental techniques. The mechanism of the
void formation is briefly discussed in this work.