OXYGEN SOLUBILITIES IN SI MELTS - THE INFLUENCE OF CARBON ADDITION

Authors
ABE K TERASHIMA K MATSUMOTO T MAEDA S NAKANISHI H HOSHIKAWA K
Citation
K. Abe et al., OXYGEN SOLUBILITIES IN SI MELTS - THE INFLUENCE OF CARBON ADDITION, Journal of the Electrochemical Society, 145(1), 1998, pp. 319-322
Citations number
14
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
1
Year of publication
1998
Pages
319 - 322
Database
ISI
SICI code
0013-4651(1998)145:1<319:OSISM->2.0.ZU;2-H
Abstract
We investigated the influence of carbon addition on oxygen solubilitie s in silicon melts. Oxygen concentration increases with increasing car bon concentration in silicon melts when melt temperatures are above 14 70 degrees C. The temperature dependence of oxygen concentration in ca rbon-doped silicon melts is strong when carbon concentration is above 5.0 x 10(17) atoms/cm(3). It is found that 87% of the oxygen atoms are related to carbon in carbon-doped silicon melts when carbon concentra tion is 3.0 x 10(18) atoms/cm(3) and silicon melt temperature is 1500 degrees C.