LASER MICROWAVE PHOTOCONDUCTANCE STUDIES OF ULTRAVIOLET-IRRADIATED SILICON-WAFERS - EFFECT OF METALLIC CONTAMINATION

Authors
LEE WP KHONG YL
Citation
Wp. Lee et Yl. Khong, LASER MICROWAVE PHOTOCONDUCTANCE STUDIES OF ULTRAVIOLET-IRRADIATED SILICON-WAFERS - EFFECT OF METALLIC CONTAMINATION, Journal of the Electrochemical Society, 145(1), 1998, pp. 329-332
Citations number
10
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
1
Year of publication
1998
Pages
329 - 332
Database
ISI
SICI code
0013-4651(1998)145:1<329:LMPSOU>2.0.ZU;2-7
Abstract
The minority carrier recombination lifetimes of ultraviolet-irradiated silicon wafers were studied using the laser-microwave photoconductanc e method. These wafers were intentionally surface contaminated with me tals. With ultraviolet irradiation, the effective minority carrier rec ombination lifetimes of these samples are enhanced. The Lifetime enhan cement occurs at a faster rate for contaminated wafers. These lifetime enhancements are not permanent; with cessation of the ultraviolet rad iation, the preirradiation levels can be restored.