INFLUENCE OF INTERFACE ROUGHNESS ON SILICON-OXIDE THICKNESS MEASURED BY ELLIPSOMETRY - FANG,S.J., CHEN,W., YAMANAKA,T., AND HELMS,C.R. - COMMENT

Authors
DOREMUS RH
Citation
Rh. Doremus, INFLUENCE OF INTERFACE ROUGHNESS ON SILICON-OXIDE THICKNESS MEASURED BY ELLIPSOMETRY - FANG,S.J., CHEN,W., YAMANAKA,T., AND HELMS,C.R. - COMMENT, Journal of the Electrochemical Society, 145(1), 1998, pp. 371-371
Citations number
3
Categorie Soggetti
Electrochemistry,"Materials Science, Coatings & Films
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
145
Issue
1
Year of publication
1998
Pages
371 - 371
Database
ISI
SICI code
0013-4651(1998)145:1<371:IOIROS>2.0.ZU;2-D