CR 3D SURFACE AND BULK STATES IN SN1-XCRXTE CR CRYSTALS/

We report a new approach to investigate metal-semiconductor interface formation. Photoemission spectroscopy was applied in order to investig ate the clean surface of a Sn-0.97 Cr0.03Te crystal and to observe its changes under sequential deposition of small amounts of Cr atoms. In order to analyse the Cr 3d contribution to the valence band, the Fano- type resonance tuned to the Cr 3p-3d transition was used. The experime nt was designed to follow the Sn0.97Cr0.03Te/Cr interface formation pr ocess. At the clean Sn0.97Cr0.03Te surface, the Cr 3d states contribut ion to the valence band was found to be positioned 0.8 eV below the Fe rmi level. After the Cr deposition processes the contribution shifted to a higher binding energy and another contribution 5.8 eV below the F ermi level was also observed.