X-RAY PHOTOELECTRON STUDY OF YB-DOPED INP

X-ray photoelectron spectra of core levels are reported for InP:Yb. Cr ystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spe ctra of the constituent components, i.e. In 3d(5/2) and P 2p, revealed a minor influence of the surface oxide species, mainly in the phospha te-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d(3/2) peak was found identical to that in Yb me tal, whereas the 4d(5/2) peak was found to be shifted to higher bindin g energies. This effect was found comparable to the case of advanced o xidation of Yb thus confirming its high reactivity, even as a bulk dop ant. The data give also a rare experimental example of detection of bu lk dopant atoms in a semiconductor matrix by X-ray photoelectron spect roscopy at the limit of detectability.