RESONANT-TUNNELING THROUGH ARRAYS OF NANOSTRUCTURES

Citation
Yb. Lyandageller et Jp. Leburton, RESONANT-TUNNELING THROUGH ARRAYS OF NANOSTRUCTURES, Semiconductor science and technology, 13(1), 1998, pp. 35-42
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
1
Year of publication
1998
Pages
35 - 42
Database
ISI
SICI code
0268-1242(1998)13:1<35:RTAON>2.0.ZU;2-M
Abstract
We investigate three-dimensional resonant tunnelling (RT) through a do uble potential barrier with a periodic modulation of the quantum well in the plane of the layers. Both elastic and phonon-assisted RT throug h transverse minibands separated by minigaps are considered. By using the Breit-Wigner-like formula for the transmission probability we find a more abrupt upward portion (front) of the current-voltage character istics and a broader negative differential resistance region than in ' conventional' RT through double barrier heterostructures. Phonon-assis ted tunnelling characteristics follow the same trends.