EXCLUSION IN THE SEMICONDUCTOR P(-P-P(+) STRUCTURE UNDER CONDITIONS OF A TEMPERATURE-GRADIENT())

The paper presents theoretical and experimental investigations of the exclusion and accumulation effects in rectangular p(+)-p-p(+) structur es with a homogeneously doped p-region under conditions of a temperatu re gradient along its base. It is shown that the temperature gradient causes a strong asymmetry of properties, such as current-voltage chara cteristics, distributions of non-equilibrium carriers and electric fie ld, with regard to polarity of the voltage drop across the base. The r esults obtained can be useful for the technology of infrared devices w orking at room temperature as well as for sensors sensitive to the pol arity of an electric field.