GAIN SPECTROSCOPY OF CONTINUOUS-WAVE INGAN MULTIQUANTUM-WELL LASER-DIODES

Authors
DEGUCHI T AZUHATA T SOTA T CHICHIBU S ARITA M NAKANISHI H NAKAMURA S
Citation
T. Deguchi et al., GAIN SPECTROSCOPY OF CONTINUOUS-WAVE INGAN MULTIQUANTUM-WELL LASER-DIODES, Semiconductor science and technology, 13(1), 1998, pp. 97-101
Citations number
42
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
1
Year of publication
1998
Pages
97 - 101
Database
ISI
SICI code
0268-1242(1998)13:1<97:GSOCIM>2.0.ZU;2-D
Abstract
A systematic study of the optical gain of continuous wave InGaN multip le quantum well laser diode wafers has been made using the variable ex citation-stripe length method. Experimental evidence is given of stimu lated emission enhanced by resonance between degenerate states and non -degenerate ones, which co-exist in quantum wells having spatial poten tial undulation due to considerable fluctuation of the InGaN compositi on.