THE ATOMIC-STRUCTURE OF CO DIMERS IN SILICON

Citation
Am. Vanbavel et al., THE ATOMIC-STRUCTURE OF CO DIMERS IN SILICON, Semiconductor science and technology, 13(1), 1998, pp. 108-115
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
13
Issue
1
Year of publication
1998
Pages
108 - 115
Database
ISI
SICI code
0268-1242(1998)13:1<108:TAOCDI>2.0.ZU;2-6
Abstract
We present Mossbauer spectra for Co-related point defects in silicon w ith emphasis on Co dimers. With the help of ab initio total energy cal culations we show that dimers constructed from two interstitial Co-i p oint defects would not be stable. Dimers involving substitutional Co-S i point defects are also not stable unless in aggregates with donors. We show that an aggregate involving one Si-i self-interstitial is the most likely candidate for the Co dimer observed experimentally.