ELECTROLUMINESCENCE FROM LASER-GROOVED SILICON

Authors
YUAN J HANEMAN D LI W ZHANG T
Citation
J. Yuan et al., ELECTROLUMINESCENCE FROM LASER-GROOVED SILICON, Semiconductor science and technology, 13(1), 1998, pp. 130-133
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
13
Issue
1
Year of publication
1998
Pages
130 - 133
Database
ISI
SICI code
0268-1242(1998)13:1<130:EFLS>2.0.ZU;2-R
Abstract
Visible-light-emitting diodes based on laser-grooved Si have been fabr icated, using semitransparent top metal contacts. The visible electrol uminescence occurs with the top metal contact negative with respect to the bulk material. Its efficiency, spectrum and good durability are s imilar to those from spark-processed Si, with the internal efficiency up to 10(-2)%. The technique has potential for applications.