LATERAL OXIDATION OF INALAS IN INP-BASED HETEROSTRUCTURES FOR LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER APPLICATIONS

Authors
GEBRETSADIK H KAMATH K ZHOU WD BHATTACHARYA P CANEAU C BHAT R
Citation
H. Gebretsadik et al., LATERAL OXIDATION OF INALAS IN INP-BASED HETEROSTRUCTURES FOR LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER APPLICATIONS, Applied physics letters, 72(2), 1998, pp. 135-137
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
2
Year of publication
1998
Pages
135 - 137
Database
ISI
SICI code
0003-6951(1998)72:2<135:LOOIII>2.0.ZU;2-2
Abstract
We have studied the wet thermal oxidation of In0.52Al0.48As and its po tential application in current and optical confinement in vertical cav ity surface emitting lasers (VCSELs). Two types of InP-based heterostr uctures were used to study the effect of adjacent layer compositions o n the lateral oxidation behavior of the InAlAs. It was found that the oxidation of I0.52Al0.48As with InP adjacent layers, compared with In0 .53Ga0.47As adjacent layers, proceeded faster, more uniformly and with minimal degradation of the surrounding layers making it ideal for opt oelectronic applications. (C) 1998 American Institute of Physics.