HIGH-POWER NEAR-RESONANT 1.55 MU-M EMITTING INGAASP INP ANTIGUIDED DIODE-LASER ARRAYS/

We present high peak-pulsed coherent power results from large-aperture , 1.55 mu m antiguided laser arrays. The InP-based devices have a comp ressively strained InGaAsP double-quantum-well active region and are f abricated by two-step self-aligned metalorganic chemical vapor deposit ion. We have obtained 2.5 W front-facet peak power in a 2.6 degrees wi de beam [6 x diffraction limit (D.L.)], with 1.2 W in the central lobe , from 40-element, 250 mu m aperture devices. The width of the central lobe remains constant from 4 to 15 x threshold. Devices with improved temperature characteristics and of geometry closer to the resonance c ondition provide 1 W peak power in a beam 1.2 degrees wide (2.7 x D.L. ), with 61% of the energy in the central lobe, and 1.75 W peak power i n a 1.5 degrees wide beam (3.5 x D.L.) at heatsink temperatures betwee n 15 and 45 degrees C. (C) 1998 American Institute of Physics.