An InP/In0.53Ga0.47As distributed absorbing Bragg reflector is investi
gated by reflectance and group-delay-time spectroscopy, The measured r
eflectance is suppressed and shows a minimum at the low-wavelength sid
e of the high-reflectance band, This suppression of reflectance is due
to an enhancement of optical absorption. The enhancement of optical a
bsorption originates from an increase in the overlap of the optical fi
eld with the absorbing InGaAs layers since an intense optical field is
confined near the surface in the spectral range of the enhancement. (
C) 1998 American Institute of Physics.