CARBON-INDUCED UNDERSATURATION OF SILICON SELF-INTERSTITIALS

Carbon diffusion into silicon is well behaved and does not generate an y nonequilibrium point defects. We show that, in contrast, the diffusi on of carbon incorporated in silicon well above its solid solubility w ill cause an undersaturation of silicon self-interstitials, which in t urn may cause retarded diffusion of boron. In addition, we predict tha t due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles. (C) 1998 A merican Institute of Physics.