REVERSIBLE AND IRREVERSIBLE EFFECTS ON THE ELECTRICAL CHARACTERISTICSOF NEW HIGH-SPEED A-SI AND A-SIC SWITCHES

The reversible effect of various factors, such as temperature, light i ntensity and potential applied to a gate electrode, on the electrical characteristics of new high-speed a-Si/c-Si- and a-SiC/c-Si-based swit ches are, for the first time, presented and discussed in this paper. T he irreversible effect of the width of amorphous film on the electrica l characteristics of these switches is also studied. The values of for ward breakover voltage (V-BF), forward voltage drop (V-F) and holding current (I-h) of these thyristor-like switches may be either reversibl y or irreversibly controlled by varying the above factors, thus contro lling the device operation. (C) 1997 Published by Elsevier Science Ltd .