REACTIVITY OF THE H-SI(111) SURFACE

The H-Si (111) surface has been well characterized [Hricovini et al., Phys. Rev. Lett. 70 (1993) 1992], so the reactivity of this surface wa s studied. H-Si (111) surfaces exposed to Cl-2, Br-2, and 1-alkenes we re studied with photoemission spectroscopy. These particular compounds were chosen because of their importance in semiconductor processing a nd surface functionalization. The observation of the growth of a Si 2p component at high binding energy, characteristic of halogen reactivit y, confirmed that bromine and chlorine gases both reacted with the H-S i (111) surface. Reactions with 1-alkenes were confirmed by measuring both the Si 2p and the C 1s core level spectra. The C 2s-based molecul ar orbitals in the valence band revealed the identity of the alkyl mon olayer on the Si (111) surface. Therefore, we found that the H-Si (111 ) surface, under certain conditions, was reactive. (C) 1997 Elsevier S cience B.V.