Si. Sheikh et al., SPLIT FREQUENCIES IN PLANAR AXISYMMETRICAL GYROELECTRIC RESONATORS, IEEE transactions on microwave theory and techniques, 46(1), 1998, pp. 62-69
Axisymmetric gyroelectric disk, ring, and composite resonator structur
es have been characterized for both InSb and GaAs semiconductors at 77
K, The calculations assume that these materials can be represented by
the tensor permittivity derived from the Drude model of cyclotron mot
ion in a plasma. Resonance and loss regions are identified and the sen
sitivity of normal mode splitting and onset frequencies to material an
d geometrical variables are graphed and tabulated. The information is
presented in terms of signal frequency and the bias field to permit a
direct comparison with results from ferrimagnetic structures. Semicond
uctor calculations show two extraordinary wave resonances and predict
excellent symmetrical wide-band normal mode splitting, Field plots for
the semiconductor disk and ring are included to explain coupled mode
behavior between modes in different bias regions.