NITRIDE FORMATION AND DANGLING-BOND PASSIVATION ON SI(111)-(7X7) WITHNH3

Citation
M. Bjorkqvist et al., NITRIDE FORMATION AND DANGLING-BOND PASSIVATION ON SI(111)-(7X7) WITHNH3, Surface science, 394(1-3), 1997, pp. 155-161
Citations number
27
Journal title
ISSN journal
00396028
Volume
394
Issue
1-3
Year of publication
1997
Pages
155 - 161
Database
ISI
SICI code
0039-6028(1997)394:1-3<155:NFADPO>2.0.ZU;2-Y
Abstract
Thermal nitridation of the Si(111)-(7 x 7) reconstructed surface with ammonia has been investigated using scanning tunneling microscopy (STM ). True nitride formation in the form of ring-like structures as in st oichiometric silicon nitride (Si3N4) was observed at imperfections on the surface, which otherwise preserved the characteristics of the (7 x 7) reconstruction. However, the ratio of reacted adatoms in the recon struction never exceeded similar to 50%, indicative of a frustrated sa turation behavior for the adatom dangling bonds in the Si(111)-(7 x 7) -NH3 reaction system. (C) 1997 Elsevier Science B.V.