GAS-SOURCE GROWTH OF GROUP-IV SEMICONDUCTORS - I - SI(001) NUCLEATIONMECHANISMS

Authors
OWEN JHG MIKI K BOWLER DR GORINGE CM GOLDFARB I BRIGGS GAD
Citation
Jhg. Owen et al., GAS-SOURCE GROWTH OF GROUP-IV SEMICONDUCTORS - I - SI(001) NUCLEATIONMECHANISMS, Surface science, 394(1-3), 1997, pp. 79-90
Citations number
31
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
394
Issue
1-3
Year of publication
1997
Pages
79 - 90
Database
ISI
SICI code
0039-6028(1997)394:1-3<79:GGOGS->2.0.ZU;2-5
Abstract
The initial stages of gas-source growth of Si(001) using disilane have been investigated using a combination of elevated-temperature STM and atomistic modelling. The reaction pathway from the initial adsorption of disilane fragments up to the nucleation of short strings of epitax ial dimers is discussed. By the use of our STM to study disilane at th e temperatures of interest, and atomistic modelling to calculate struc tural stability and significant activation barriers, we are able to pr opose a complete description of the mechanisms which underlie gas-sour ce growth. (C) 1997 Elsevier Science B.V.