M. Rogalla et al., DETERMINATION OF THE EL2 INTRODUCTION RATE AND FERMI-LEVEL SHIFT DUE TO PROTON AND PION IRRADIATION IN SEMIINSULATING GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(1), 1998, pp. 53-60
Citations number
24
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical
The bulk damage (namely the introduction rate of the arsenic antisite
As-Ga and its ionisation ratio, the Fermi-level position and resistivi
ty) was determined as a function of the non-ionising energy loss (NIEL
) of hadrons in semi-insulating (SI) GaAs, The study was performed usi
ng near-infrared (NIR) absorption and time dependent charge measuremen
ts (TDCM) on 23 GeV proton and 192 MeV pion irradiated Liquid Encapsul
ated Czochralski (LEG) grown GaAs. We have shown that the bulk damage
scales linearly with the total NIEL up to a pion fluence of 5 x 10(14)
particles/cm(2) The EL2 introduction rate for the high energetic pion
s and protons were determined to be 92.7 +/- 2.6 cm(-1) and 68.1 +/- 3
.7 cm(-1), respectively. A comparison of these values gives a hardness
factor for the 192 MeV pions of 9.5 +/- 1.4. In addition it was found
that the variation of the Fermi-level and resistivity with radiation
damage is a function of the initial resistivity of the SI GaAs before
irradiation. (C) 1998 Elsevier Science B.V.