MAGNETORESONANT RAMAN-SCATTERING IN ZINCBLENDE-TYPE SEMICONDUCTORS - ELECTRON-PHONON INTERACTION MEDIATED BY A DEFORMATION POTENTIAL

The one-phonon Raman scattering efficiency for III-V and II-VI zinc-bl ende-type semiconductors in high magnetic fields including the valence -band admixture has been obtained. The coupling of the heavy-hole and light-hole valence bands has been taken into account through the Lutti nger-Kohn Hamiltonian model. The Raman profiles are calculated as a fu nction of magnetic field B-0 and laser frequency omega(L) with a defor mation-potential type of electron-phonon interaction. The influence on the Raman tensor of the nonparabolicity as well as the anisotropic be havior of Landau ladders in terms of magnetic field and the z componen t of the hole wave vector are analyzed. Explicit expressions for the R aman scattering efficiency as a function of omega(L), B-0, and the Lut tinger-Kohn parameters are given. The dependence of the lifetime broad ening on the laser incident energy, magnetic field, and Landau quantum number of the intermediate electronic states has been considered in t he Raman scattering efficiency. Based on these grounds, the essential features of recent magneto-Raman experiments in bulk GaAs, using the c rossed polarization geometries (z) over bar(sigma(+/-)sigma(-/+))z can be explained. [S0163-1829(97)04547-5].