NACL CLUSTERS ON MGO(001) - A MODEL SYSTEM TO EXPLORE INTERFACIAL CRYSTAL-GROWTH, NUCLEATION, AND GRAIN-BOUNDARY FORMATION

Citation
Dc. Sayle et al., NACL CLUSTERS ON MGO(001) - A MODEL SYSTEM TO EXPLORE INTERFACIAL CRYSTAL-GROWTH, NUCLEATION, AND GRAIN-BOUNDARY FORMATION, Physical review. B, Condensed matter, 56(24), 1997, pp. 15952-15961
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
24
Year of publication
1997
Pages
15952 - 15961
Database
ISI
SICI code
0163-1829(1997)56:24<15952:NCOM-A>2.0.ZU;2-N
Abstract
We present a method for constructing interface models, based on the se quential deposition of ions on a substrate surface in conjunction with energy minimization. The results provide information on how the subst rate directs the growth of the overlying material and show that as wel l as factors arising from the misfit between the two materials, both s urface steps or defects, may lead to the formation of grain boundaries in the overlying thin film, with implications for supported supercond ucting thin films and catalysis. [S0163-1829(97)00747-9].