We postulate wide-band-gap forms of carbon that locally have a planar
bonding configuration as in graphite and, in contrast to diamond, are
promising candidates for n-type doping by nitrogen. The presence of lo
calized pi bonds makes them as stable as fullerene C-60 and causes lar
ge band gaps of approximate to 3 eV to appear. The allotropes accept b
oth nitrogen and boron as substitutional dopants, making them potentia
lly extremely useful for high-power, high-temperature, and high-speed
device applications.