Ultrathin rare earth oxide films have been fabricated using Langmuir-B
lodgett films of rare earth arachidates as precursors. Irradiation of
these films with UV light and subsequent heating of the films (350 deg
rees C) result in oxide films exhibiting a smoothness comparable to th
at of the Si-wafers used as substrates (roughness R approximate to 0.3
MI). The film thickness can easily be adjusted via the number of Lang
muir-Blodgett monolayers deposited onto the substrate. (C) 1997 Publis
hed by Elsevier Science S.A.