KINETICS OF SILICON MONOXIDE AMMONOLYSIS FOR NANOPHASE SILICON-NITRIDE SYNTHESIS

Authors
Citation
Dc. Lin et S. Kimura, KINETICS OF SILICON MONOXIDE AMMONOLYSIS FOR NANOPHASE SILICON-NITRIDE SYNTHESIS, Journal of the American Ceramic Society, 79(11), 1996, pp. 2947-2955
Citations number
45
Categorie Soggetti
Material Science, Ceramics
ISSN journal
00027820
Volume
79
Issue
11
Year of publication
1996
Pages
2947 - 2955
Database
ISI
SICI code
0002-7820(1996)79:11<2947:KOSMAF>2.0.ZU;2-S
Abstract
Silicon monoxide vapor generated from Si/SiO2 mixed-powder compacts wa s used with NH3 to synthesize silicon nitride in a tubular how reactor operated at temperatures in the range of 1300 degrees-1400 degrees C. The ammonolysis of SiO with excess NH, was very rapid, yielding three different types of silicon nitride at different longitudinal location s in the reactor: amorphous nanophase powder of an average size of abo ut 20 nm, amorphous whiskers of a few micrometers in diameter, and alp ha-polycrystals. The amorphous products mere heat-treated for crystall ization at temperatures between 1300 degrees and 1560 degrees C in a s tream of dissociated NH3, N-2, or N-2/H-2 mixture gas, When dissociate d NH3 was used, nanophase powder was crystallized at 1300 degrees C. T he yield of nanophase silicon nitride from SiO varied from 13% to 43%, depending on operating conditions.