Dc. Lin et S. Kimura, KINETICS OF SILICON MONOXIDE AMMONOLYSIS FOR NANOPHASE SILICON-NITRIDE SYNTHESIS, Journal of the American Ceramic Society, 79(11), 1996, pp. 2947-2955
Silicon monoxide vapor generated from Si/SiO2 mixed-powder compacts wa
s used with NH3 to synthesize silicon nitride in a tubular how reactor
operated at temperatures in the range of 1300 degrees-1400 degrees C.
The ammonolysis of SiO with excess NH, was very rapid, yielding three
different types of silicon nitride at different longitudinal location
s in the reactor: amorphous nanophase powder of an average size of abo
ut 20 nm, amorphous whiskers of a few micrometers in diameter, and alp
ha-polycrystals. The amorphous products mere heat-treated for crystall
ization at temperatures between 1300 degrees and 1560 degrees C in a s
tream of dissociated NH3, N-2, or N-2/H-2 mixture gas, When dissociate
d NH3 was used, nanophase powder was crystallized at 1300 degrees C. T
he yield of nanophase silicon nitride from SiO varied from 13% to 43%,
depending on operating conditions.