TRANSFORM-LIMITED, NARROW-LINEWIDTH LASING ACTION IN ORGANIC SEMICONDUCTOR MICROCAVITIES

Citation
V. Bulovic et al., TRANSFORM-LIMITED, NARROW-LINEWIDTH LASING ACTION IN ORGANIC SEMICONDUCTOR MICROCAVITIES, Science, 279(5350), 1998, pp. 553-555
Citations number
10
Categorie Soggetti
Multidisciplinary Sciences
Journal title
ISSN journal
00368075
Volume
279
Issue
5350
Year of publication
1998
Pages
553 - 555
Database
ISI
SICI code
0036-8075(1998)279:5350<553:TNLAIO>2.0.ZU;2-3
Abstract
Lasing action in organic vertical-cavity surface-emitting laser (OVCSE L) structures is demonstrated. Optically pumped OVCSELs with an active layer composed of a thin-film organic semiconductor tris-(8-hydroxyqu inoline) aluminum (Alq(3)) doped with DCM laser dye produced very narr ow linewidth (0.2 +/- 0.1 angstrom), high-power (3 watts) emission tha t could be varied in different devices from orange to red. The efficie nt energy transfer from Alq(3) to DCM results in a threshold input ene rgy of 300 microjoules per square centimeter. An operational lifetime >10(6) laser pulses was achieved for a device operated well above thre shold in atmosphere. The linewidths above threshold are Fourier-transf orm-limited and could potentially be narrowed further.