Raman and Infrared spectroscopies have been used to characterise the c
ompositional disorder in a-Si1-xCx alloys. Samples with different carb
on concentration have been prepared by ion implantation of carbon into
a silicon matrix and have been annealed at different temperatures in
order to follow the evolution of disorder. The obtained results show a
n increase of the magnitude of compositional disorder with carbon conc
entration and a reduction of such a disorder upon thermal treatments u
p to 1000 degrees C where it vanish during the amorphous-to-crystallin
e phase transition. A quantitative interpretation of the compositional
disorder has been given as a function of the carbon concentration and
annealing temperature.